Manifolds for uniform vapor deposition

ABSTRACT

A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

BACKGROUND OF THE INVENTION Field

The field relates generally to manifolds for uniform vapor deposition,and, in particular, to manifolds for improving reactant mixing in atomiclayer deposition (ALD) reactors.

Description of the Related Art

There are several vapor deposition methods for depositing thin films onsurfaces of substrates. These methods include vacuum evaporationdeposition, Molecular Beam Epitaxy (MBE), different variants of ChemicalVapor Deposition (CVD) (including low-pressure and organometallic CVDand plasma-enhanced CVD), and Atomic Layer Deposition (ALD).

In an ALD process, one or more substrates with at least one surface tobe coated are introduced into a deposition chamber. The substrate isheated to a desired temperature, typically above the condensationtemperatures of the selected vapor phase reactants and below theirthermal decomposition temperatures. One reactant is capable of reactingwith the adsorbed species of a prior reactant to form a desired producton the substrate surface. Two, three or more reactants are provided tothe substrate, typically in spatially and temporally separated pulses.

In an example, in a first pulse, a first reactant representing aprecursor material is adsorbed largely intact in a self-limiting processon a wafer. The process is self-limiting because the vapor phaseprecursor cannot react with or adsorb upon the adsorbed portion of theprecursor. After any remaining first reactant is removed from the waferor chamber, the adsorbed precursor material on the substrate reactedwith a subsequent reactant pulse to form no more than a single molecularlayer of the desired material. The subsequent reactant may, e.g., stripligands from the adsorbed precursor material to make the surfacereactive again, replace ligands and leave additional material for acompound, etc. In an unadulterated ALD process, less than a monolayer isformed per cycle on average due to steric hindrance, whereby the size ofthe precursor molecules prevent access to adsorption sites on thesubstrate, which may become available in subsequent cycles. Thickerfilms are produced through repeated growth cycles until the targetthickness is achieved. Growth rate is often provided in terms ofangstroms per cycle because in theory the growth depends solely onnumber of cycles, and has no dependence upon mass supplied ortemperature, as long as each pulse is saturative and the temperature iswithin the ideal ALD temperature window for those reactants (no thermaldecomposition and no condensation).

Reactants and temperatures are typically selected to avoid bothcondensation and thermal decomposition of the reactants during theprocess, such that chemical reaction is responsible for growth throughmultiple cycles. However, in certain variations on ALD processing,conditions can be selected to vary growth rates per cycle, possiblybeyond one molecular monolayer per cycle, by utilizing hybrid CVD andALD reaction mechanisms. Other variations maybe allow some amount ofspatial and/or temporal overlap between the reactants. In ALD andvariations thereof, two, three, four or more reactants can be suppliedin sequence in a single cycle, and the content of each cycle can bevaried to tailor composition.

During a typical ALD process, the reactant pulses, all of which are invapor form, are pulsed sequentially into a reaction space (e.g.,reaction chamber) with removal steps between reactant pulses to avoiddirect interaction between reactants in the vapor phase. For example,inert gas pulses or “purge” pulses can be provided between the pulses ofreactants. The inert gas purges the chamber of one reactant pulse beforethe next reactant pulse to avoid gas phase mixing. To obtain aself-limiting growth, a sufficient amount of each precursor is providedto saturate the substrate. As the growth rate in each cycle of a trueALD process is self-limiting, the rate of growth is proportional to therepetition rate of the reaction sequences rather than to the flux ofreactant.

SUMMARY

The systems and methods of the present invention have several features,no single one of which is solely responsible for its desirableattributes. Without limiting the scope of this invention as expressed bythe claims which follow, various features will now be discussed briefly.After considering this discussion, and particularly after reading thesection entitled “Detailed Description,” one will understand how thefeatures described herein provide several advantages over traditionalgas delivery methods and systems.

In one embodiment, a semiconductor processing device is disclosed. Thesemiconductor processing device can include a manifold comprising a boreand having an inner wall, the inner wall at least partially defining thebore. A first axial portion of the bore can extend along a longitudinalaxis of the manifold. The semiconductor processing device can include asupply channel that provides fluid communication between a gas sourceand the bore. The supply channel can comprise a slit defining an atleast partially annular gap through the inner wall of the manifold todeliver a gas from the gas source to the bore. The at least partiallyannular gap can be revolved about the longitudinal axis.

In another embodiment, a semiconductor processing device is disclosed.The semiconductor processing device can include a manifold comprising abore and a supply channel that provides fluid communication between agas source and the bore to supply a gas to the bore. The bore cancomprise a channel having an annular flow portion with an at leastpartially annular cross-section and a non-annular flow portion with anon-annular cross-section, the non-annular flow portion disposeddownstream of the annular flow portion.

In another embodiment, a method of deposition is disclosed. The methodcan include supplying a gas through a supply channel to a bore of amanifold. The method can include creating an at least partially annularflow pattern in an annular flow portion of the bore such that the gasflows along a longitudinal axis of the manifold with an at leastpartially annular cross-section. Downstream of the annular flow portion,a non-annular flow pattern can be created in a non-annular portion ofthe bore such that the gas flows along the longitudinal axis with anon-annular cross-section.

In another embodiment, a method of deposition is disclosed. The methodcan include supplying a gas to a supply channel. The method can includedirecting the gas from the supply channel to a bore of a manifoldthrough a slit defining an at least partially annular gap along an innerwall of the manifold, the at least partially annular gap revolved abouta longitudinal axis of the manifold.

In another embodiment, a semiconductor processing device is disclosed.The semiconductor processing device can include a manifold comprising abore therein, the bore defining a gas passageway between a first endportion of the manifold and a second end portion of the manifold. Thefirst end portion can be disposed opposite to and spaced from the secondend portion along a longitudinal axis of the manifold by a firstdistance. The gas passageway can extend through the manifold for asecond distance larger than the first distance. A reaction chamber canbe disposed downstream of and in fluid communication with the bore.

In another embodiment, a semiconductor processing device is disclosed.The semiconductor processing device can include a manifold comprising abore having an axial portion that defines a longitudinal axis of themanifold and a lateral portion extending non-parallel to thelongitudinal axis. The semiconductor processing device can include asupply channel that supplies gas to the axial portion of the bore at afirst location along the longitudinal axis. The lateral portion can bedisposed at a second location downstream of the first location, thelateral portion extending non-parallel relative to the longitudinalaxis. The semiconductor processing device can include a reaction chamberdisposed downstream of and in fluid communication with the bore.

In another embodiment, a method of deposition is disclosed. The methodcan include providing a manifold comprising a bore therein. The bore candefine a gas passageway between a first end portion of the manifold anda second end portion of the manifold. The first end portion can bedisposed opposite to and spaced from the second end portion along alongitudinal axis of the manifold by a first distance. The method cancomprise supplying a reactant gas to the bore. The method can comprisedirecting the reactant gas along the gas passageway from the first endportion to the second end portion for a second distance, the seconddistance larger than the first distance.

In another embodiment, a method of deposition is disclosed. The methodcan include providing a manifold comprising a bore having an axialportion that defines a longitudinal axis of the manifold and a lateralportion extending non-parallel to the longitudinal axis. The method caninclude supplying a reactant gas to the axial portion of the bore at afirst location along the longitudinal axis. The method can includedirecting the reactant gas through the axial portion of the boreparallel to the longitudinal axis. Downstream of the axial portion, thereactant gas can be directed through the lateral portion of the bore ina direction non-parallel to the longitudinal axis.

In another embodiment, a semiconductor processing device is disclosed.The semiconductor processing device can include a manifold comprising abore defining an inner wall a channel through the manifold and a sourceof gas. A supply channel can deliver the gas to the bore by way of anopening on the inner wall of the bore. All the gas can be delivered tothe bore by the opening.

In another embodiment, a method of deposition is disclosed. The methodcan include providing a manifold comprising a bore having an inner walland defining a channel through the manifold. The method can includesupplying all of a reactant gas through a single opening on the innerwall of the bore.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features, aspects and advantages of the presentinvention will now be described with reference to the drawings ofseveral embodiments, which embodiments are intended to illustrate andnot to limit the invention.

FIG. 1A is a schematic illustration of a flow path through a manifold ofa semiconductor processing device.

FIG. 1B is a schematic partial transverse cross-section of the flow pathshown in FIG. 1A, taken along lines 1B-1B.

FIG. 1C is a schematic top view of a gas deposition pattern on asubstrate that is processed according to the flow path of FIGS. 1A-1B.

FIG. 2 is a perspective view of an ALD manifold configured in accordancewith various embodiments.

FIGS. 3A-3D illustrate an embodiment of a semiconductor device, in whicha supply channel comprising a slit is used to supply gas to the bore.

FIGS. 4A-4F illustrate another embodiment of a semiconductor device, inwhich the bore comprises a channel with an annular flow portion and anon-annular flow portion.

FIGS. 5A and 5B are flowcharts illustrating example deposition methods,according to various embodiments.

FIGS. 6A-6J illustrate an embodiment of a semiconductor processingdevice in which the manifold has an extended mixing length.

FIGS. 7A and 7B are flowcharts illustrating example deposition methods,according to various embodiments.

FIGS. 8A-8F illustrate various embodiments of a semiconductor processingdevice in which a single supply tier supplies gas to the bore.

FIG. 9 is a flowchart illustrating an example deposition method,according to various embodiments.

DETAILED DESCRIPTION

In vapor or gas deposition processes, it can be important to provideuniform deposition across the width or major surface of the substrate(e.g., a semiconductor wafer). Uniform deposition ensures that depositedlayers have the same thickness and/or chemical composition across thesubstrate, which improves the yield of integrated devices (e.g.,processors, memory devices, etc.), and therefore the profitability persubstrate. To improve the uniformity of deposition, various embodimentsdisclosed herein can enhance the mixing profile of the different gasessupplied within a manifold of the semiconductor processing system.Enhanced mixing of supplied gases can beneficially supply a relativelyuniform gas mixture across the major surface of the substrate.

I. Overview of Atomic Layer Deposition Processes

The embodiments disclosed herein can be utilized with semiconductorprocessing devices configured for any suitable gas or vapor depositionprocess. For example, the illustrated embodiments show various systemsfor depositing material on a substrate using atomic layer deposition(ALD) techniques. Among vapor deposition techniques, ALD has manyadvantages, including high conformality at low temperatures and finecontrol of composition during the process. ALD type processes are basedon controlled, self-limiting surface reactions of precursor chemicals.Gas phase reactions are avoided by feeding the precursors alternatelyand sequentially into the reaction chamber. Vapor phase reactants areseparated from each other in the reaction chamber, for example, byremoving excess reactants and/or reactant by-products from the reactionchamber between reactant pulses. Removal can be accomplished by avariety of techniques, including purging and/or lowering pressurebetween pulses. Pulses can be sequential in a continuous flow, or thereactor can be isolated and can backfilled for each pulse.

Briefly, a substrate is loaded into a reaction chamber and is heated toa suitable deposition temperature, generally at lowered pressure.Deposition temperatures are typically maintained below the precursorthermal decomposition temperature but at a high enough level to avoidcondensation of reactants and to provide the activation energy for thedesired surface reactions. Of course, the appropriate temperature windowfor any given ALD reaction will depend upon the surface termination andreactant species involved.

A first reactant is conducted into the chamber in the form of vaporphase pulse and contacted with the surface of a substrate. Conditionsare preferably selected such that no more than about one monolayer ofthe precursor is adsorbed on the substrate surface in a self-limitingmanner. Excess first reactant and reaction byproducts, if any, arepurged from the reaction chamber, often with a pulse of inert gas suchas nitrogen or argon.

Purging the reaction chamber means that vapor phase precursors and/orvapor phase byproducts are removed from the reaction chamber such as byevacuating the chamber with a vacuum pump and/or by replacing the gasinside the reactor with an inert gas such as argon or nitrogen. Typicalpurging times for a single wafer reactor are from about 0.05 to 20seconds, more preferably between about 1 and 10 seconds, and still morepreferably between about 1 and 2 seconds. However, other purge times canbe utilized if desired, such as when depositing layers over extremelyhigh aspect ratio structures or other structures with complex surfacemorphology is needed, or when a high volume batch reactor is employed.The appropriate pulsing times can be readily determined by the skilledartisan based on the particular circumstances.

A second gaseous reactant is pulsed into the chamber where it reactswith the first reactant bound to the surface. Excess second reactant andgaseous by-products of the surface reaction are purged out of thereaction chamber, preferably with the aid of an inert gas. The steps ofpulsing and purging are repeated until a thin film of the desiredthickness has been formed on the substrate, with each cycle leaving nomore than a molecular monolayer. Some ALD processes can have morecomplex sequences with three or more precursor pulses alternated, whereeach precursor contributes elements to the growing film. Reactants canalso be supplied in their own pulses or with precursor pulses to stripor getter adhered ligands and/or free by-product, rather than contributeelements to the film. Additionally, not all cycles need to be identical.For example, a binary film can be doped with a third element byinfrequent addition of a third reactant pulse, e.g., every fifth cycle,in order to control stoichiometry of the film, and the frequency canchange during the deposition in order to grade film composition.Moreover, while described as starting with an adsorbing reactant, somerecipes may start with the other reactant or with a separate surfacetreatment, for example to ensure maximal reaction sites to initiate theALD reactions (e.g., for certain recipes, a water pulse can providehydroxyl groups on the substrate to enhance reactivity for certain ALDprecursors).

As mentioned above, each pulse or phase of each cycle is preferablyself-limiting. An excess of reactant precursors is supplied in eachphase to saturate the susceptible structure surfaces. Surface saturationensures reactant occupation of all available reactive sites (subject,for example, to physical size or steric hindrance restraints) and thusensures excellent step coverage over any topography on the substrate. Insome arrangements, the degree of self-limiting behavior can be adjustedby, e.g., allowing some overlap of reactant pulses to trade offdeposition speed (by allowing some CVD-type reactions) againstconformality. Ideal ALD conditions with reactants well separated in timeand space provide near perfect self-limiting behavior and thus maximumconformality, but steric hindrance results in less than one molecularlayer per cycle. Limited CVD reactions mixed with the self-limiting ALDreactions can raise the deposition speed. While embodiments describedherein are particularly advantageous for sequentially pulsed depositiontechniques, like ALD and mixed-mode ALD/CVD, the manifold can also beemployed for pulsed or continuous CVD processing.

Examples of suitable reactors that may be used include commerciallyavailable ALD equipment such as any of the EmerALD® or Eagle® seriesreactors, available from ASM International of Almere, the Netherlands.Many other kinds of reactors capable of ALD growth of thin films,including CVD reactors equipped with appropriate equipment and means forpulsing the precursors, can be employed. In some embodiments a flow typeALD reactor is used, as compared to a backfilled reactor. In someembodiments, the manifold is upstream of an injector designed todistribute gas into the reaction space, particularly a dispersionmechanism such as a showerhead assembly above a single-wafer reactionspace.

The ALD processes can optionally be carried out in a reactor or reactionspace connected to a cluster tool. In a cluster tool, because eachreaction space is dedicated to one type of process, the temperature ofthe reaction space in each module can be kept constant, which improvesthe throughput compared to a reactor in which is the substrate is heatedto the process temperature before each run. A stand-alone reactor can beequipped with a load-lock. In that case, it is not necessary to cooldown the reaction space between each run. These processes can also becarried out in a reactor designed to process multiple substratessimultaneously, e.g., a mini-batch type showerhead reactor.

FIG. 1A is a schematic illustration of a flow path 1 through a manifoldof a semiconductor processing device. FIG. 1A illustrates theconfiguration of various channels inside the manifold, without showingthe structure of the manifold itself, so as to better illustrate therelative orientation and interconnection of the internal channels of amanifold. The illustrated flow path 1 includes a bore 30 with an inertgas inlet 20 and an outlet 32. The cross-sectional area of the bore 30increases between the inlet 20 and the outlet 32. In the illustratedarrangement, the cross-sectional area increases at a tapered portion 34,which in the illustrated arrangement coincides with a merger of some ofthe reactant flow paths. The flow path 1 also includes a second inertgas inlet 22 which is in fluid communication with an inert gasdistribution channel 40. The inert gas distribution channel 40 extendsgenerally in a plane intersecting the longitudinal axis of the bore 30.Although the illustrated inert gas distribution channel 40 follows acircular curvature and extends a full 360°, in some embodiments, inertor reactant gas distribution channels can have other shapes (e.g.,elliptical), and need not be a closed shape, that is, can extend onlypartway about the longitudinal axis of the bore, such as a C-shapedchannel.

The inert gas distribution channel 40 feeds inert gas to two inert gaspassageways 42 a, 42 b, each of which can be connected to an inert gasvalve. The inert gas passageways 42 a, 42 b connect with the inert gasdistribution channel 40 at different angular locations distributed aboutthe axis of the bore 30 (as viewed in a transverse cross-section). Inthe illustrated arrangement, the inert gas passageways 42 a, 42 bconnect with the inert gas distribution channel 40 about 90° apart fromone another, and about 135° (in opposite directions) from where theinert gas inlet 22 connects with the inert gas distribution channel 40.

The flow path 1 also includes a reactant gas passageway 37 which is influid communication with a reactant gas distribution channel 36. Thereactant gas distribution channel 36 extends generally in a planeintersecting the longitudinal axis of bore 30, and is generallyconcentric with the inert gas distribution channel 40. The reactant gasdistribution channel 36 conveys gas to multiple, e.g., three reactantgas supply channels 38 a, 38 b, 38 c (only two of which are visible inFIG. 1A), each of which connects with the reactant gas distributionchannel 36 at a different angular location about the axis of the bore 30(as viewed in a transverse cross-section). In the illustratedembodiment, each of the reactant gas supply channels 38 a, 38 b, 38 cconnect with the reactant gas distribution channel 36 at a locationwhich is angularly offset from where the reactant gas passageway 37connects with the reactant gas distribution channel 36. The reactant gassupply channels 38 a, 38 b, 38 c also connect with the bore 30 atdifferent angular locations distributed about the axis of the bore (asviewed in a transverse cross-section), and at an angle with respect tothe longitudinal axis of the bore 30 (as viewed in a longitudinalcross-section).

The flow path 1 also includes another reactant gas passageway 44 b whichis in fluid communication with a reactant gas distribution channel 50.The reactant gas distribution channel 50 extends generally in a planeintersecting the longitudinal axis of bore 30. The reactant gasdistribution channel 50 conveys reactant gas to multiple, e.g., threereactant gas supply channels 52 a, 52 b, 52 c (only two of which arevisible in FIG. 1A), each of which connects with the reactant gasdistribution channel 50 at a different angular location about the axisof the bore 30 (as viewed in a transverse cross-section). The reactantgas supply channels 52 a, 52 b, 52 c also connect with the bore 30 atdifferent angular locations about the axis of the bore (as viewed in atransverse cross-section), and at an angle with respect to thelongitudinal axis of the bore (as viewed in a longitudinalcross-section).

The flow path 1 also includes a further reactant gas inlet 44 a which isin fluid communication with a reactant gas distribution channel 46. Thereactant gas distribution channel 46 extends generally in a planeintersecting the longitudinal axis of bore 30. The reactant gasdistribution channel 46 conveys reactant gas to multiple, e.g., threereactant gas supply channels 48 a, 48 b, 48 c, each of which connectswith the reactant gas distribution channel 46 at a different angularlocation about the axis of the bore 30 (as viewed in a transversecross-section. The reactant gas supply channels 48 a, 48 b, 48 c alsoconnect with the bore 30 at different angular locations about the axisof the bore 30 (as viewed in a transverse cross-section), and at anangle with respect to the longitudinal axis of the bore 30 (as viewed ina longitudinal cross-section). Each of the reactant gas supply channels48 a, 48 b, 48 c connects with the bore 30 at a location which isangularly offset from where the reactant gas supply channels 52 a, 52 b,52 c connect with the bore. The reactant gas supply channels 48 a, 48 b,48 c also connect with the bore 30 at a greater angle than the reactantgas supply channels 52 a, 52 b, 52 c due to the reactant gasdistribution channel 46 being a greater distance from the bore 30 thanthe reactant gas distribution channel 50. Additionally, the bore 30widens at the tapered portion 34 where the reactant gas supply channels52 a, 52 b, 52 c, 48 a, 48 b, 48 c merge with the bore 30. This allows asmoother merger and mixing of the reactants entering at this point withflow of gas (e.g., inert gas) that enters at upstream portions of thebore 30.

FIG. 1B is a schematic partial transverse cross-section of the flow pathshown in FIG. 1A, taken along lines 1B-1B. As shown in FIG. 1B, thereactant gas supply channels 38 a, 38 b, 38 c connect with the bore 30at different angular locations about the axis of the bore. As also shownin FIG. 1B, horizontal components of the reactant gas supply channels 38a, 38 b, 38 c extend in a radial direction from the axis (or, from thecenter) of the bore. The horizontal components of the reactant gassupply channels 52 a, 52 b, 52 c and the reactant gas supply channels 48a, 48 b, 48 c can also connect with the bore in a radial fashion. Here,“horizontal” is meant to convey components of the supply channels in theplane of the cross-section, transverse to the bore axis, rather than anyparticular orientation relative to ground.

Thus, in the flow pathway 1 shown in FIGS. 1A-1B, a reactant gas pulsecan deliver reactant gas through three separate supply channels andopenings to the bore 30. For example, in one pulse, a first reactant gascan be supplied to the bore 30 by way of the supply channels 38 a, 38 b,38 c. In another pulse, a second reactant gas can be supplied to thebore 30 by way of the supply channels 52 a, 52 b, 52 c. In a thirdpulse, a third reactant gas can be supplied to the bore 30 by way of thesupply channels 48 a, 48 b, 48 c. Additional details of the flow path40, and the semiconductor processing devices that define the flow path40, can be found throughout U.S. patent application Ser. No. 13/284,738,filed Oct. 28, 2011, the contents of which are incorporated by referenceherein in their entirety and for all purposes.

FIG. 1C is a schematic top view of a gas deposition pattern 90 on asubstrate that is processed according to the flow path 1 of FIGS. 1A-1B.As shown in FIG. 1C, the deposition pattern 90 includes three distinctspots 92 of regions with high concentrations of reactant gas mixtures,with the surrounding regions at lower concentrations. The three distinctspots 92 may result from the use of three distinct openings to the bore30 that are in communication with three separate supply channels (suchas supply channels 52 a-52 c, 48 a-48 c, 38 a-38 c) that convey the samereactant gas to the bore 30 and ultimately to the substrate. Suchnon-uniform deposition may be undesirable, because different regions ofthe substrate may have different deposition chemistries and/orthicknesses, which can ultimately reduce device yield. Accordingly,there remains a continuing need for improving the uniformity of vapordeposition in semiconductor processing devices.

II. Manifolds with Annular Supply Slit and/or Annular Flow Pathways

In some embodiments, vapor deposition uniformity can be improved byproviding an at least partially annular slit in an inner wall of thebore to supply gases to the bore. For example, in various embodiments,the bore can comprise a first axial portion extending along alongitudinal axis of the manifold. A supply channel can be in fluidcommunication between a gas source (e.g., a reactant gas source) and thebore. The supply channel can comprise a slit defining an at leastpartially annular gap through the inner wall of the bore to deliver agas from the gas source to the bore. The at least partially annular gapcan be revolved about the longitudinal axis of the manifold.

In addition, or alternatively, an at least partially annular flowpathway can be created in the bore to deliver gases along a longitudinalaxis of the manifold. For example, a supply channel can be in fluidcommunication between a gas source (e.g., a reactant gas source) and thebore. The bore can comprise a channel having an annular flow portionwith an at least partially annular cross-section and a non-annular flowportion with a non-annular cross-section. The non-annular cross-sectioncan be disposed downstream of the annular flow portion.

FIG. 2 is a perspective view of an ALD manifold 100 configured inaccordance with various embodiments. Unless otherwise noted, thecomponents of FIG. 2 may be generally similar to the components of FIG.1, except like components have been incremented by 100 relative toFIG. 1. As shown in FIG. 2, the manifold 100 comprises a body 102 thatincludes four blocks: an upper block 104, an intermediate block 106, alower block 108 (see FIG. 3A), and a diffuser block 110. Although FIG. 2shows a composite manifold body 102 comprising multiple stackedsub-portions or blocks, some embodiments can comprise fewer or moresub-portions or blocks, while others can comprise a monolithic orunitary manifold body. The use of multiple blocks 104, 106, 108, 110 canbeneficially enable the construction of channels disposed at variousangles inside the manifold 100.

Mounted on the body 102 are two valve blocks 112 a, 112 b. An inert gasvalve 114 a and a reactant gas valve 116 a are mounted on the valveblock 112 a. An inert gas valve 114 b and a reactant gas valve 116 b aremounted on the valve block 112 b. Each of the valve blocks 112 a, 112 bcan include a reactant gas inlet 118 a, 118 b. At upper block 104, themanifold body 102 includes two inert gas inlets 120, 122. The reactantgas inlets 118 a, 118 b can be connected to different reactant sources,some of which may be naturally gaseous (i.e., gaseous at roomtemperature and atmospheric pressure), and some of which may be solid orliquid under standard conditions.

The body 102 can also include one or more heaters 128. Each of the valveblocks 112 a, 112 b can also include one or more heaters 126. Theheaters 126, 128 can be disposed in such a manner as to maintain asconstant a temperature as possible throughout the body 102 and/or thevalve blocks. The heaters 126, 128 can be any type of heater that canoperate at high temperatures suitable for ALD processes, includingwithout limitation linear rod-style, heater jacket, heater blank, heattrace tape, or coiled resistance heaters.

FIG. 3A is a schematic side cross-sectional view of a semiconductorprocessing device 10 including the manifold 100 of FIG. 2, taken alonglines 3A-3A of FIG. 2. As shown in FIG. 3A, the semiconductor processingdevice 10 can include the manifold 100 and a reaction chamber 810disposed downstream of and coupled with the manifold body 102. Themanifold body 102 can comprise a longitudinal axis Z along which thebore 130 extends (or along which an axial portion of the bore 130extends). In FIG. 3A, the inert gas inlet 120 at the top of the manifoldbody 102 connects with the bore 130 that extends longitudinally throughthe body 102 to an outlet 132. The bore 130 has a larger cross-sectionalarea near the outlet 132 than it does near the inlet 120. In theillustrated embodiment, the increase in cross-sectional area occurs at atapered portion 134 of the bore 130. Although not illustrated, anexpander or other segment may be connected to the bottom of the manifold100 to widen the flow path between the outlet 132 of the bore 130 andthe reaction chamber 810.

A first reactant gas source 850 a can connect with a distributionchannel 136 in the body 102 via a passageway 137. The distributionchannel 136 can be formed by lower and upper surfaces, respectively, ofthe upper block 104 and the intermediate block 106, and can extend in aplane that intersects with the longitudinal axis of the bore 130. Forexample, in some embodiments, the distribution channel 136 can berevolved at least partially (e.g., entirely) about the longitudinal axisZ of the manifold 100. The distribution channel 136 can be in fluidcommunication with the bore 130 via a supply channel 138 comprising aslit through an inner wall 103 defined by the bore 130. FIG. 3Billustrates examples of the slit formed through the inner wall 103.

The inert gas inlet 122 (see also FIG. 2) connects with an inert gasdistribution channel 140 in the body 102. The dashed line shown at theinlet 122 in FIG. 3A indicates that the passageway which connects theinlet 122 to the inert gas distribution channel 140 is not disposed inthe cross-section defined in FIG. 3A. An inert gas source 855 can supplyan inert gas to the inert gas inlet 122 and the inert gas distributionchannel 140. The inert gas distribution channel 140 shown in FIG. 3A isformed by lower and upper surfaces, respectively, of the upper block 104and the intermediate block 106, and extends in a plane that intersectsthe longitudinal axis of the bore 130. In some embodiments, the inertgas channel 140 can be disposed at about the same longitudinal locationas the distribution channel 136. The inert gas distribution channel 140can supply inert gas to the inert gas valve 114 a via a passageway 142a. The inert gas channel 140 may be revolved around the longitudinalaxis Z, and may be disposed concentric relative to (e.g., concentricallyabout) the distribution channel 136. As shown in FIGS. 2 and 3A, thepassageway 142 a extends through the intermediate block 106 and thevalve block 112 a. The inert gas distribution channel 140 can alsosupply inert gas to the inert gas valve 114 b via a passageway 142 b.The dashed lines for the passageway 142 b indicate that the passageway142 b does not lie in the illustrated cross-section.

With continued reference to FIG. 3A, the inert gas valve 114 a controlsa supply of inert gas from the passageway 142 a (and thus, from theinert gas distribution channel 140) to the reactant gas valve 116 a. Thereactant gas valve 116 a controls a supply of a reactant gas from theinlet 118 a (or a mixture of a reactant gas from the inlet 118 a and aninert gas from the inert gas valve 114 a) to a passageway 144 a, whichis connected to a gas distribution channel 146 in the body 102. A secondreactant source 850 b can supply a reactant gas to the inlet 118 a, thereactant gas valve 116 a, and the passageway 144 a. As shown in FIGS. 2and 3A, the passageway 144 a extends through the valve block 112 a, theintermediate block 106, and the lower block 108. The distributionchannel 146 can be formed by lower and upper surfaces, respectively, ofthe lower block 108 and the diffusion block 110, and can extend in aplane that intersects the longitudinal axis Z of the manifold 100 (e.g.,normal to the longitudinal axis Z in some embodiments). The distributionchannel 146 can be in fluid communication with the bore 130 via a supplychannel 148 comprising a slit (see FIG. 3B) through an inner wall 103defined by the bore 130.

As shown in FIG. 3A, the inert gas valve 114 b can control a supply ofinert gas from the passageway 142 b (and thus, from the inert gasdistribution channel 140) to the reactant gas valve 116 b (see FIG. 2).The reactant gas valve 116 b controls a supply of a reactant gas fromthe inlet 118 b (or a mixture of a reactant gas from the inlet 118 b andan inert gas from the inert gas valve 114 b) to a passageway 144 b,which is connected to a distribution channel 150 in the body 102. Thedashed lines in FIG. 3A indicate that the passageways 142 b, 144 b donot lie in the cross-section illustrated in FIG. 3A. A third reactantsource 850 c can supply a reactant gas to the inlet 118 b, the reactantgas valve 116 b, and the passageway 144 b. As shown in FIG. 3A, thepassageway 144 b extends through the valve block 112 b and theintermediate block 106. The distribution channel 150 and/or thepassageway 144 b can be formed by lower and upper surfaces,respectively, of the intermediate block 106 and the lower block 108, andcan extend in a plane that intersects the longitudinal axis Z of themanifold 100 (e.g., normal to the longitudinal axis Z in someembodiments). The distribution channel 150 can be in fluid communicationwith the bore 130 via a supply channel 152 comprising a slit (see FIG.3B) through an inner wall 103 defined by the bore 130. As shown in FIG.3A, the distribution channel 150 and the supply channel 152 can bedisposed and can connect with the bore 130 at a location along thelongitudinal axis Z that is upstream of the distribution channel 146 andthe supply channel 148.

While illustrated with three reactant inlets and two inert gas inlets tothe manifold body 102, the number of precursor/reactant and inert gasinlets can vary in embodiments. Also, while illustrated with two each,the number of precursor/reactant valves 116 a, 116 b and inert gasvalves 114 a, 114 a feeding distribution channels can vary inembodiments, depending on the particular application and the desiredprocessing capability of the ALD system. An ALD system may include atleast two reactants and gas distribution channels therefor. The valves114 a, 114 b, 116 a, and 116 b may be any type of valve that canwithstand high temperatures within the ALD hot zone. Valves 114 a, 114b, 116 a, and 116 b may be ball valves, butterfly valves, check valves,gate valves, globe valves or the like. Metal diaphragm valves may alsobe used, and may be preferred for a high temperature environment (e.g.,in temperatures up to about 220° C.). In some embodiments, the valves114 a, 114 b, 116 a, and 116 b can be, for example and withoutlimitation, pneumatically actuated valves or piezoelectric solenoid typevalves. In embodiments, the valves 114 a, 114 b, 116 a, and 116 b can beconfigured to operate at very high speeds, for example, with opening andclosing times of less than 80 ms, with speeds of less than 10 ms in someembodiments. The valves 114 a, 114 b, 116 a, and 116 b may be formedfrom any material that will function at the high temperatures requiredfor ALD processing, such as 316L stainless steel and the like. Someembodiments, such as an ALD system configured for alumina deposition,can include valves configured to operate up to 220° C. Still otherembodiments can include valves configured to operate at temperatures upto 300° C., up to 400° C., or at even higher temperatures.

The manifold body 102 of FIG. 3A can be connected upstream of thereaction chamber 810. In particular, the outlet 132 of the bore 130 cancommunicate with a reactant injector, particularly a dispersionmechanism in the form of a showerhead 820 in the illustrated embodiment.The showerhead 820 includes a showerhead plate 822 that defines ashowerhead plenum 824 or chamber above the plate 822. The showerhead 820communicates vapors from the manifold 100 to a reaction space 826 belowthe showerhead 820. The reaction chamber 810 includes a substratesupport 828 configured to support a substrate 829 (e.g., a semiconductorwafer) in the reaction space 826. The reaction chamber also includes anexhaust opening 830 connected a vacuum source. While shown with asingle-wafer, showerhead type of reaction chamber, the skilled artisanwill appreciate that manifold can also be connected to other types ofreaction chambers with other types of injectors, e.g. batch or furnacetype, horizontal or cross-flow reactor, etc.

In the illustrated embodiment, three reactant sources 850 a-850 c areshown, although fewer or greater numbers can be provided in otherarrangements. In some embodiments, one or more of the reactant sources850 a-850 c can contain a naturally gaseous ALD reactant, such as H₂,NH₃, N₂, O₂, or O₃. Additionally or alternatively, one or more of thereactant sources 850 a-850 c can include a vaporizer for vaporizing areactant which is solid or liquid at room temperature and atmosphericpressure. The vaporizer(s) can be, e.g., liquid bubblers or solidsublimation vessels. Examples of solid or liquid reactants that can beheld and vaporized in a vaporizer include, without limitation, liquidorganometallic precursors such as trimethylaluminum (TMA), TEMAHf, orTEMAZr; liquid semiconductor precursors, such as dichlorosilane (DCS),trichlorosilane (TCS), trisilane, organic silanes, or TiCl4; andpowdered precursors, such as ZrCl₄ or HfCl₄. The skilled artisan willappreciate that embodiments can include any desired combination andarrangement of naturally gaseous, solid or liquid reactant sources.

As shown in FIG. 3A, the inert gas source 855 can provide purge gas tothe reactant valves 116 a, 116 b and thus to the reactant distributionchannels 146, 150 (via the inert gas inlet 122, distribution channel140, passageways 142 a, 142 b and inert gas valves 114 a, 114 b). Theinert gas source 855 is shown feeding the top of the central bore 130(via the inert gas inlet 120). The same inert gas source 855 may alsopurge the reactant distribution channel 136 (via the reactant inlet 124and the passageway 137). However, in other embodiments, separate inertgas sources can be provided for each of these feeds.

The semiconductor processing device 10 can also include at least onecontroller 860, including processor(s) and memory with programming forcontrolling various components of the device 10. While shownschematically as connected to the reaction chamber 810, the skilledartisan will appreciate that the controller 860 communicates withvarious components of the reactor, such as vapor control valves, heatingsystems, gate valves, robot wafer carriers, etc., to carry outdeposition processes. In operation, the controller 860 can arrange for asubstrate 829 (such as a semiconductor wafer) to be loaded onto thesubstrate support 828, and for the reaction chamber 810 to be closed,purged and typically pumped down in readiness for deposition processes,particularly atomic layer deposition (ALD). A typical ALD sequence willnow be described with reference to the reactor components of FIGS. 2 and3A.

In one embodiment, prior to reactant supply and during the entire ALDprocess, purge gas flows through the top inlet 120 into the bore 130.When the controller instructs a first ALD reactant pulse, for examplefrom the reactant source 850 b, the reactant valve 116 a is open topermit flow from the reactant source 850 a into the passageway 144 a andaround the distribution channel 146. Backpressure within thedistribution channel 146 enables distribution of the gas through thesupply channel 148 leading from the distribution channel 146 to the bore130, where the first reactant merges with the inert gas flow from theinlet 120. At the same time, inert gas can flow through all otherreactant channels (e.g., the reactant distribution channel 136, thesupply channel 138, the reactant distribution channel 150 and supplychannel 152) into the bore 130. From the bore 130, the mixture of inertgas and first reactant is fed to the showerhead plenum 824 anddistributed across the showerhead plate 822 (or other dispersionmechanism) and into the reaction space 826. During this first reactantpulse, the narrower portion of the bore 130 upstream of the taperedportion 134 is filled with flowing inert gas and prevents upstreamdiffusion of the reactant.

After a sufficient duration to saturate the substrate 829 surface withthe first reactant, the controller 860 switches off the reactant valve116 a, opens the inert gas valve 114 a, and thus purges the reactantvalve 116 a, the passageway 144 a, the reactant distribution channel 146and the depending supply channel 148. Inert gas can continue to besupplied through the bore 130 from the top inlet 120 and the otherreactant pathways for a sufficient duration to purge the manifold 100,the showerhead plenum 824, and the reaction space 826 of any remainingfirst reactant and/or byproduct. The skilled artisan will appreciatethat other reactant removal procedures can be used in place of or inaddition to purging.

After a suitably long removal period to avoid interaction of the firstreactant with the subsequent reactant, the controller 860 can instructcontrol valves to supply a second ALD reactant from, e.g., the gaseousreactant source 850 a, into the reactant passageway 137 and the upperreactant distribution channel 136. Backpressure within the distributionchannel 136 enables distribution of the gas through the supply channel138 leading from the distribution channel 136 to the bore 130, where thesecond reactant merges with the inert gas flow. At the same time, inertgas can flow through all other reactant channels (e.g., the reactantdistribution channel 146, the supply channel 148, the reactantdistribution channel 150 and supply channel 152) into the bore 130. Fromthe bore 130, the mixture of inert gas and second reactant is fed to theshowerhead plenum 824 and distributed across the showerhead plate 822(or other dispersion mechanism) and into the reaction space 826. Duringthis second reactant pulse, the portion of the bore 130 upstream of itsmerger with the supply channel 138 is filled with flowing inert gas,which prevents upstream diffusion of the second reactant. Similarly, theflow of inert gas through all other reactant flow paths preventsbackwards diffusion of the second reactant.

Following saturative surface reaction on the substrate, a removal stepsimilar to the purge step described above can be performed, includingpurging of the distribution channel 136 and its depending supply channel138. The above described cycle can be repeated with the reactantdistribution channel 150 and supply channel 152 to supply a thirdreactant gas to the substrate 829. The cycle can be further repeateduntil a sufficiently thick layer is formed on the substrate 829.

FIG. 3B is a magnified side cross-sectional view of the portion 3B ofthe semiconductor processing device 10 shown in FIG. 3A. In particular,FIG. 3B shows the reactant distribution channels 146, 150 whichcommunicate with the bore 130 by way of the respective supply channels148, 152. FIG. 3C is a schematic perspective cross-sectional view of afluid pathway 101 defined through the distribution channels 146, 150 andsupply channels 148, 152. In particular, FIG. 3C is a negative of theportion 3B of the semiconductor device 10, insofar as FIG. 3Cillustrates the channels through which gas is supplied rather than thestructure (e.g., the manifold 100) which defines the channels.

As shown in FIGS. 3B and 3C, the supply channels 148, 152 can eachcomprise a respective slit 105 a, 105 b that defines an at leastpartially annular gap 107 a, 107 b in the inner wall 103 of the bore130. As shown in FIG. 3C, the slits 105 a, 105 b with associated gaps107 a, 107 b can be revolved about the longitudinal axis Z of themanifold 100 such that the slits 105 a, 105 b define an at least partialannulus in the inner wall 103. In the embodiment illustrated in FIGS.3A-3C, the slits 105 a, 105 b extend entirely around the longitudinalaxis Z, i.e., the slits 105 a, 105 b define a complete annulus of 360°revolution about the longitudinal axis Z. In other embodiments, however,the slits 105 a, 105 b can define a partial annulus about thelongitudinal axis Z. For example, the slits 105 a, 105 b can be revolvedabout the Z axis by an angle in a range of 90° to 360°, in a range of120° to 360°, in a range of 180° to 360°, in a range of 240° to 360°,etc.

The gaps 107 a, 107 b defined by the slits 105 a, 105 b can comprise anarrow opening having a thickness less than a circumferential length ofthe slits 105 a, 105 b. That is, the arc length of the slits 105 a, 105b along a perimeter or circumference of the inner wall 103 (i.e., aboutthe axis Z) can be greater than the thickness of the gaps 107 a, 107 b.In some embodiments, the thickness of the gaps 107 a, 107 b can be in arange of 0.05 mm to 1.5 mm, or more particularly, in a range of 0.1 mmto 1 mm, in a range of 0.1 mm to 0.7 mm. In some embodiments, thethickness of the gaps 107 a, 107 b can be in a range of 0.05 mm to 0.5mm, e.g., in a range of 0.1 mm to 0.5 mm, in a range of 0.1 mm to 0.3mm, or in a range of 0.2 mm to 0.3 mm, or about 0.25 mm in someembodiments. In some embodiments, the thickness of the gaps 107 a, 107 bcan be in a range of 0.3 mm to 1.5 mm, e.g., in a range of 0.3 mm to 1mm, in a range of 0.3 mm to 0.7 mm, or in a range of 0.4 mm to 0.6 mm,or about 0.5 mm in some embodiments.

By contrast, the thickness of the distribution channels 146, 150 alongthe axis Z can be significantly greater than the thickness of the gaps107 a, 107 b. For example, the thickness of the distribution channels146, 150 can be at least twice as thick as the gaps 107 a, 107 b, atleast five times as thick as the gaps 107 a, 107 b, at least ten timesas thick as the gaps 107 a, 107 b, at least twenty times as thick as thegaps 107 a, 107 b, or at least fifty times as thick as the gaps 107 a,107 b. The gases inside the distribution channels 146, 150 can have abackpressure caused by the restriction in thickness provided by thenarrow gaps 107 a, 107 b. The backpressure can beneficially push thegases to the bore 130 through the gaps 107 a, 107 b of the slits 105 a,105 b.

FIG. 3D is a schematic side cross-sectional profile of the manifold body102 and bore 130 illustrating the flow of a source gas S and an inertgas I during an example processing pulse. As shown in FIG. 3D, inert gasI (such as argon, Ar) can be supplied to the bore 130 by way of thecentral inert gas inlet 120 at the top of the manifold 100. The inertgas I (e.g., Ar) can also be supplied to the bore 130 by the upstreamsupply channel 152, which may also comprise a slit as explained above.In the illustrated arrangement, the inert gas I supplied through thebore 130 upstream of the supply channel 148 can comprise a push gas thatdrives gas through the bore 130 at sufficient pressure to cause thegases to rapidly travel to the reaction chamber 810.

As shown in FIG. 3D, the source gas S (e.g., titanium chloride) can besupplied through the slit 105 a of the supply channel 148 by way of thenarrow gap 107 a in the inner wall 103 of the manifold 102 and definedby the bore 130. The source gas S can be entrained with the inert gas Iflowing downstream towards the reaction chamber 810. As shown in FIG.3D, because the source gas S is introduced along the periphery of thebore 130 through the slit 105 a, the source gas S may be concentratedabout the outer edges of the central inert gas I flow path. Thus, asshown in FIG. 3D, the resulting downstream flow pattern can comprise acentral inert gas I pattern disposed in the middle of the bore 130, andan annular source gas S pattern disposed about the inert gas I pattern.The flow pattern of inert I and source S gases may comprise anon-annular pattern defined by the cross-section of the bore 130. Forexample, the flow pattern of inert I and source S gases may mix togetherin a rounded (e.g., circular or elliptical) or polygonal cross-sectiondefined by the cross-section of the bore 130.

The resulting patterns shown in FIG. 3D may be an improvement over thethree-lobed flow pattern shown in FIG. 1C. Instead of three differentlobes representing high source gas concentration, in FIG. 3D, theconcentration of the source and inert gases varies continuously withoutthe three hot spots shown in FIG. 1C. For example, in FIG. 3D, the flowpattern is somewhat non-uniform and varies from the center of the bore130 to the wall 103 of the bore 130. However, adjustments to variousprocessing temperatures may reduce the non-uniformity and enhancemixing.

Although the supply channels with slits described in connection withFIGS. 3A-3D may improve uniformity of gas mixing in the manifold 100, itmay be desirable to further improve the mixing in order to improvedevice yield. FIGS. 4A-4F illustrate another embodiment of asemiconductor device 1, in which the bore comprises a channel with anannular flow portion and a non-annular flow portion. Unless otherwisenoted, the components of FIGS. 4A-4F may be similar to or the same aslike numbered components in FIGS. 2-3D.

In particular, FIG. 4A is a schematic side cross-sectional view of asemiconductor device 1 including the manifold 100 of FIG. 2, taken alongthe cross-section labeled 4A-4A. FIG. 4B is a schematic sidecross-sectional view of the semiconductor device 1 of FIG. 4A, takenalong the cross-section labeled 4B-4B in FIG. 2. The gas sources 850a-850 c, 855 and valves 114 a-114 b, 116 a-116 b are not shown in FIGS.4A-4B for ease of illustration, but it should be appreciated that thechannels in FIGS. 4A-4B can be connected to gas sources and valves in amanner similar to that shown in FIGS. 3A-3D.

In FIGS. 4A and 4B, the manifold body 102 can comprise an inert gasdistribution channel 140 which communicates with an inert gas source(such as source 855) and with valves 114 a-114 b, 116 a-116 b by way ofpassageways 142 a, 142 b (see FIG. 3A). In addition, as with FIG. 3A,the manifold body 102 can comprise a first distribution channel 146 anda second distribution channel 150. The first and second distributionchannels 146, 160 can be disposed at least partially about thelongitudinal axis Z of the manifold 100, and can be in fluidcommunication with corresponding reactant gas sources (such as thesources 850 a-c) and with the inert gas source, by way of passageways144 a, 144 b and the reactant and inert gas valves. As explained abovewith respect to FIG. 3A, the inert gas valves 114 a-114 b and thereactant gas valves 116 a-116 b can be selectively activated to supplyinert gas and/or reactant gas to the bore 130. For example, as explainedabove with respect to FIGS. 3A-3D, the supply channels 148, 152 cansupply the gas to the bore 130 by way of corresponding slits 105 a, 105b through the inner wall 103 of the bore 130. The slits 105 a, 105 b canbe revolved around the longitudinal axis Z to define an at least partialannulus (e.g., a complete annulus) in the wall 103 of the bore 130.

Unlike the embodiment of FIGS. 3A-3D, the lower block 108 can comprisethree sub-blocks 108 a, 108 b 108 c, in which the distribution channels146, 150 and supply channels 148, 152 are formed. For example, as shownin FIG. 4A, the distribution channel 150 and supply channel 152 can bedefined by a lower surface of the sub-block 108 a and an upper surfaceof the sub-block 108 b. The distribution channel 146 and supply channel148 can be defined by a lower surface of the sub-block 108 b and anupper surface of the sub-block 108 c.

In addition, as shown in FIGS. 4A-4B, a third distribution channel 171can be defined in the diffusion block 110, e.g., the channel 171 can bedefined by a lower surface of the sub-block 108 c and an upper surfaceof the diffusion block 110. The third distribution channel 171 can berevolved at least partially (e.g., entirely or partially) about thelongitudinal axis Z and can be in fluid communication with a gas source(such as the reactant source 850 a-850 c and/or the inert gas source855) by way of a passageway 175. As with the distribution channels 146,150, the distribution channel 171 can supply gas to the bore 130 by wayof a supply channel 172, which may be generally similar to the supplychannels 148, 152. For example, the supply channel 172 can comprise aslit having an at least partially annular gap through the inner wall 103of the bore 130. The slit and gap can be revolved about the longitudinalaxis Z as with the supply channels 148, 152 described herein.

Unlike the embodiment of FIGS. 3A-3D, the device 10 shown in FIGS. 4A-4Bcomprises an upstream non-annular flow pattern in an upstreamnon-annular flow portion 174A of the bore 130, an annular flow portionin an annular flow portion 173 of the bore 130, and a downstreamnon-annular flow pattern in a downstream non-annular flow portion 174Bof the bore 130. By contrast, the device 10 in FIGS. 3A-3D can comprisea non-annular flow portion through the length of the bore 130. As shownin FIGS. 4A-4B, a plug 170 can be disposed within the bore 130 in theannular flow portion 173 of the bore 130. As explained herein, the plug170 can cooperate with the inner wall 103 of the manifold 100 to createan at least partially annular flow pathway as viewed in cross-section ofthe bore 130.

As used herein, the non-annular flow pattern and the non-annular flowportions 174A, 174B can comprise any suitable non-annular cross-sectionof the bore 130. For example, the non-annular flow portions 174A, 174Bcan define a rounded (e.g., circular or elliptical) or a polygonalcross-section in which the gases fill the entire cross-section, e.g.,there is no plug or obstruction in the non-annular flow portions 174A,174B. Rather, the gases flow through the entire cross-section of thebore 130.

By contrast, the annular flow pattern and annular flow portion 173 cancomprise an annular cross-section of the bore 130, in which an interiorregion of the bore 130 is partially occluded so as to enable the gasesto flow along the longitudinal axis Z through an annular region boundedby the inner wall 103 of the manifold 130 and an obstruction within thebore 130, e.g., the plug 170. The annular flow pattern and thecross-section of the annular portion 173 can be rounded (e.g., boundedby concentric circles or ellipses), polygonal (e.g., bounded byconcentric polygons), or any other suitable annular shape. The annularcross-section may be symmetric in some embodiments. In otherembodiments, the annular cross-section may be asymmetric.

FIG. 4C is a schematic perspective view of the plug 170 coupled with thesub-block 108 a of lower block 108. FIG. 4D is a schematic perspectivecross-sectional view of the plug 170 and sub-block 108 a of FIG. 4C.Beneficially, the manifold body 102 can be formed of multiple blocks andsub-blocks, as explained herein. The modularity with which the manifoldbody 102 can be constructed enables the introduction of usefulcomponents such as the plug 170 shown in FIGS. 4C and 4D. For example,as shown in FIGS. 4C and 4D, the sub-block 108 a can include an opening176 through which the plug 170 is disposed. In some embodiments, theplug 170 can be connected to the sub-block 108 a by way of an adhesiveor fastener. In some embodiments, the plug 170 can be fitted into theopening 176 by way of an interference or friction fit. In still otherembodiments, the plug 170 can comprise a nail-like feature, in which anupstream flange extends over the upper surface of the sub-block 108 a tosecure the plug 170 to the sub-block 108 a.

Moreover, as shown in FIGS. 4C-4D, the sub-block 108 a can include aplurality of holes 177 disposed about the opening 176 and the plug 170.Thus, gases supplied upstream of the sub-block 108 a can pass around anupstream tapered portion 170A of the plug 170. The upstream taperedportion 170A of the plug 170 can create a transition from non-annularflow to annular flow. As the gases approach the upstream tip of thetapered portion 170A, the gases can be divided into an at leastpartially annular flow pattern. The holes 177 can enable upstream gasesto pass through the sub-block 108 a and around the plug 170. Adownstream tapered portion 170B of the plug 170 can transition the gasesfrom annular flow to non-annular flow.

FIG. 4E is a schematic perspective cross-sectional view of a flowpathway 178 defined through the distribution channels 146, 150, 171 andsupply channels 148, 152, 172. In particular, FIG. 4E is a negative of aportion of the manifold body 102, insofar as the channels through whichgas is supplied is illustrated rather than the structure (e.g., themanifold 100) which defines the channels. As shown in FIG. 4E, at anupstream portion of the flow pathway 178, the gas can flow along an atleast partial annular pathway 173 through hole channels 177A defined bythe holes 177 of FIGS. 4C-4D. As explained above, the holes 177 canenable the gases to flow through the sub-block 108 a. Gas from thedistribution channel 150 can be supplied to the annular portion 173 ofthe bore 130 by way of the supply channel 152, which can comprise theslit 105 b. Gas from the distribution channel 146 can be supplied to theannular portion 173 of the bore 130 by way of the supply channel 148comprising the slit 105 a. Similarly, gas from the distribution channel171 can be supplied to the annular portion 173 of the bore 130 by way ofthe supply channel 172 which can comprise a slit 105 c.

The at least partial annular portion 173 shown in FIG. 4E is a completeannulus (i.e., revolved about the longitudinal axis Z by 360°, but inother embodiments, the portion 173 can comprise a partial annulusdefining a revolution between 90° and 360°, between 120° and 360°,between 180° and 360°, between 240° and 360°, etc. As shown in FIG. 4E,the annular portion 173 can transition into the downstream non-annularpathway 174B, and the gases can be conveyed to the reaction chamber 510as explained herein.

FIG. 4F is a magnified, schematic side cross-sectional view of themanifold body 102, illustrating the upstream non-annular flow portion174A, the annular flow portion 173, and the downstream non-annular flowportion 174B. As shown in FIG. 4F, a first inert gas I₁ (such as Argon)can be supplied through the inlet 120. The first inert gas I₁ can flowalong the longitudinal axis Z through the non-annular flow portion 174Aof the bore with a non-annular flow cross-section. As shown on the rightside of FIG. 4F, the gases flowing through the non-annular portion 174Acan have a non-annular cross-sectional flow profile N₁, in which thefirst inert gas I₁ flows through the entire volume bounded by the innerwall 103 of the bore 130. Thus, the flow profile N₁ does not have anybarriers or plugs in the interior of the bore 130.

The first inert gas I₁ can transition from non-annular flow to at leastpartially annular flow (e.g., complete annular flow) within the annularflow portion 173 when the first inert gas I₁ encounters the downstreamtapered portion 170A of the plug 170. The first inert gas I₁ can passthrough the holes 177 and can travel downstream along the annular flowportion 173 about the outer periphery of the plug 170, e.g., between theouter periphery of the plug 170 and the inner wall 103 of the manifoldbody 102. As shown in a first annular flow profile A₁, the first inertgas I₁ can uniformly fill the annular space provided between the plug170 and the inner wall 103 of the manifold body 102.

During an example pulse of gas to the device 10, a source gas S can besupplied to the annular portion 173 of the bore 130 by way of thedistribution channel 146 and the supply channel 148. For example, asexplained above, the source gas S (e.g., a reactant gas) can bedelivered from the wider distribution channel 146 to the narrow slit 105a by way of backpressure built up in the channel 146. As shown in asecond annular flow profile A₂, the source gas S can enter uniformlyabout the wall 103 such that source gas S can push the inert gas I₁radially inward. In the second annular flow profile A₂, the source gas Scan be disposed concentrically about the inert gas h. Beneficially, theannular flow portion 173 can promote mixing between the source gas S andthe first inert gas I₁, at least in part because the constricted areaprovided by the flow portion 173 causes the source gas S and the firstinert gas I₁ to intermix together.

A second inert gas I₂ (such as argon) can be supplied to the annularflow portion 173 of the bore 130 by way of the third distributionchannel 171 and the supply channel 172, which can comprise a narrow slit105 c defining an at least partially annular gap 107 c through the wall103 of the bore 130. Advantageously, the second inert gas I₂ can pushthe source gas S and the first inert gas I₁ towards the outer peripheryof the plug 170 to enhance mixing. As shown in FIG. 4F, a third annularflow profile A₃ can be defined in the annular portion 173 in which thesource gas S is disposed annularly between the first and second inertgases I₁, I₂. The constricted annular portion 173 can enhance missingamong the source gas S and the inert gases I₁, I₂, as shown in a fourthannular flow profile A₄ disposed about the downstream tapered portion170B of the plug 170.

The mixed gases can transition from an annular flow profile A₄ to asecond non-annular profile N₂ downstream of the plug 170. As the mixedgases emerge into the downstream non-annular portion 174B, the gases canbe sufficiently mixed so as to provide a substantially uniformconcentration and/or thickness on the substrate. Thus, the embodimentshown in FIGS. 4A-4F can improve the mixing and reduce non-uniformitiesassociated with other types of flow manifolds. The restricted flow pathsdefined by the annular portion 173 of the bore 130 can facilitateimproved mixing of any number and type of gases. The embodiment of FIGS.3A-3D and 4A-4F can result in an average deposition non-uniformity ofless than 5%, e.g., less than 2% (e.g., about 1.8%), as compared withthe pattern of FIG. 1C which can result in an average non-uniformity ofabout 14%.

FIG. 5A is a flowchart illustrating a method 500 of depositing a film ona substrate. The method 500 begins in a block 501 to supply a reactantgas through a supply channel to a bore of a manifold. As explainedherein, a distribution channel can convey gas from a source (such as asource of reactant or inert gas) to the supply channel. The distributionchannel can be annularly disposed about a longitudinal axis of themanifold.

In a block 502, the reactant gas can be directed from the supply channelto the bore through a slit. The slit can define an at least partiallyannular gap along an inner wall of the bore. The at least partiallyannular gap can be revolved around the longitudinal axis. For example,the slit can comprise a full annulus revolved 360° about thelongitudinal axis. In other embodiments, the slit can comprise a partialannulus revolved only partially about the longitudinal axis. Asexplained herein, the at least partially annular gap can comprise athickness that is significantly smaller than a circumferential orperipheral length of the gap along the wall of the manifold.Beneficially, as explained herein, the slit can provide relativelyuniform gas flow to the bore. In some embodiments, as explained herein,a plug can be provided to define an at least partially annular flowpath. Non-annular flow paths can be provided upstream and downstream ofthe at least partially annular flow path.

FIG. 5B is a flowchart illustrating a method 550 of depositing a film ona substrate, according to various embodiments. The method 550 begins ina block 551 to supply a reactant gas through a supply channel to a boreof a manifold. As explained herein, a distribution channel can conveygas from a source (such as a source of reactant or inert gas) to thesupply channel. The distribution channel can be annularly disposed abouta longitudinal axis of the manifold in some embodiments.

Moving to a block 552, an at least partially annular flow pattern can becreated in an annular flow portion of the bore such that the reactantgas flows along a longitudinal axis of the manifold with an at leastpartially annular cross-section. For example, in some embodiments, theat least partially annular flow pattern can be defined by a plug (suchas the plug 170) disposed within the bore. The plug can partiallyobstruct the bore to divide the gas flow such that the gas flows aboutan outer periphery of the plug. As explained herein, upstream of the atleast partially annular cross-section, the gas can flow in an upstreamnon-annular flow pattern. When the gas reaches the annular flow portion,the gas can flow around the outer periphery of the plug. The constrictedarea provided by the annular flow pathway can beneficially enhance themixing of gases flowing through the bore.

In a block 553, downstream of the annular flow portion, a non-annularflow portion can be created in a non-annular portion of the bore suchthat the reactant gas flows along the longitudinal axis with anon-annular cross-section. As explained herein, the plug can compriseupstream and downstream tapered portions that can enable the transitionof the gas flow from non-annular to annular, and from annular tonon-annular. The convergence of the annular gas pathway into adownstream non-annular portion can further enhance mixing of suppliedgases, which can advantageously improve device yield.

III. Manifolds with Extended Mixing Length

Various embodiments disclosed herein can enable reduce depositionnon-uniformity and improve mixing by extending the mixing length alongthe bore 130 downstream of the location(s) at which gases are suppliedto the bore 130. For example, in some embodiments, a semiconductorprocessing device can comprise a manifold comprising a bore therein. Thebore can define a gas passageway between a first end portion of themanifold and a second end portion of the manifold. The first end portioncan be disposed opposite to and spaced from the second end portion alonga longitudinal axis of the manifold by a first distance. The gaspassageway can extend through the manifold for a second distance largerthan the first distance. For example, in some embodiments, the seconddistance can be at least 1.5 times the first distance, at least 2 timesthe first distance, at least 3 times the first distance, or at least 5times the first distance. In some embodiments, the second distance canbe in a range of 1.5 times to 10 times the first distance, e.g., in arange of 2 times to 5 times the first distance. A reaction chamber canbe disposed downstream of and in fluid communication with the bore.

In some embodiments, a semiconductor processing device can include amanifold comprising a bore having an axial portion that defines alongitudinal axis of the manifold and a lateral portion extendingnon-parallel to the longitudinal axis. A supply channel that suppliesgas to the axial portion of the bore can be disposed at a first locationalong the longitudinal axis. The lateral portion can be disposed at asecond location downstream of the first location. The lateral portioncan extend non-parallel relative to the longitudinal axis. A reactionchamber can be disposed downstream of and in fluid communication withthe bore.

FIGS. 6A-6J illustrate an embodiment of a semiconductor processingdevice 10 in which the manifold 100 has an extended mixing length.Unless otherwise noted, reference numerals in FIGS. 6A-6J refer tocomponents that are the same as or similar to like numbered componentsfrom FIGS. 2-4F. For example, FIG. 6A is a schematic perspective view ofthe manifold 100 with an extended mixing length. FIG. 6B is a schematicperspective exploded view of the manifold 100 of FIG. 6A. The manifold100 can include a manifold body 102 connected with valve blocks 112 a,112 b. Reactant valves 116 a, 116 b and inert gas valves 114 a, 114 bcan be disposed on the blocks 112 a, 112 b. Inert gas inlets 120, 122can supply inert gas to the manifold 100. The manifold body 102 cancomprise multiple blocks 104, 106, 108. Unlike the embodiment of FIGS.3A-4F, the intermediate block 106 can comprise a sub-block 106 a and asub-block 106 b. The lower block 108 can comprise a first sub-block 108a, a second sub-block 108 b, and a third sub-block 108 c. As explainedabove, the use of multiple blocks and sub-blocks can enable a modularconstruction of the manifold 100 which can enable the use of internalchannels with curved shapes and other internal lumens.

Beneficially, as explained herein, the sub-blocks 108 a-108 c can definean extending mixing length pathway 180 having a first lateral portion180 a, an offset axial portion 180 b, and a second lateral portion 180b. As explained herein, the pathway 180 can provide an extended mixinglength downstream of where the supply gases are introduced to the bore130.

FIG. 6C is a schematic side cross-sectional view of a semiconductorprocessing device 10 that includes the manifold 100 of FIGS. 6A-6B and areaction chamber 810. As with FIGS. 1A and 2-4F, the manifold 100 caninclude gas distribution channels 136, 150, and 146, in addition to aninert gas distribution channel 140. Supply channels 138 a-c can conveygases from the distribution channel 136 to the bore 130. Supply channels152 a-c can convey gases from the distribution channel 150 to the bore130. Supply channels 148 a-c can convey gases from the distributionchannel 146 to the bore 130. In the embodiment of FIG. 6C, the supplychannels 138 a-c, 152 a-c, 148 a-c can comprise angled supply channelssimilar to those shown in FIG. 1A. In other embodiments, however, thesupply channels can comprise the supply channels 138, 148, 152, and/or172 of FIGS. 3A-4F, which include slits defining an at least partiallyannular gap about the longitudinal axis Z of the manifold 100. Moreover,in some embodiments, the bore 130 of FIG. 6C can comprise a plug 170defining an at least partially annular flow pathway through which thegases can flow. Thus, the manifold 100 of FIG. 6C can be used incombination with the slits and/or annular flow portions described inconnection with FIGS. 3A-4F.

As explained below in connection with FIGS. 6D-6J, the extended mixinglength pathway 180 can extend the mixing length of the bore 130 toenhance mixing. As shown in FIG. 6C, the pathway 180 of the bore 130 canbe disposed downstream of the location L at which the most downstreamsupply channel supplies gas to the bore 130. Thus, as explained herein,the gases supplied by the supply channels 138, 146, 152 may initiallymix within an upstream axial portion 130A of the bore 130 which extendsalong the longitudinal axis Z upstream of the extended mixing lengthpathway 180.

The pathway 180 can extend the mixing length (and therefore mixing time)of the supplied gases as compared with a bore that extends straightthrough the manifold 100 along the longitudinal axis Z. As explainedherein, the extended length pathway 180 can comprise the first lateralportion 180 a which extends non-parallel to and away from thelongitudinal axis Z, the offset axial portion 180 b which extendsgenerally parallel to, but offset from, the longitudinal axis Z, and thesecond lateral portion 180 c which extends non-parallel to and towardsthe longitudinal axis Z. The second lateral portion 180 c of the bore130 can transition into a downstream axial portion 130B that extendsdownstream from the pathway 180 along the longitudinal axis Z to thereaction chamber 810. Although the downstream axial portion 130B isillustrated as being disposed within the manifold 100 for some length,it should be appreciated that the downstream axial portion 130B maycomprise a very short length or may comprise a juncture at which thepathway 180 merges with the bore 130 at the inlet to the reactionchamber 810. That is, the second lateral portion 180 c may extendlaterally towards the axis Z, and an opening in the manifold may provideaxial fluid communication directly between the second lateral portion180 c and the reaction chamber 810. In such an embodiment, thedownstream axial portion 130B can comprise the opening or aperture whichprovides axial fluid communication between the pathway 180 and thereaction chamber 810.

FIGS. 6D-6J illustrate the extended mixing length flow pathway 180 whichis disposed downstream of the location L at which the downstream-mostsupply channel merges with the bore 130. In particular, FIGS. 6A-6Iillustrate the pathway 180 through the sub-blocks 108 a-108 c. FIG. 6Jis a schematic perspective view of the flow pathways through themanifold 100.

For example, FIG. 6D is a schematic top perspective view of the firstsub-block 108 a. FIG. 6E is a schematic bottom perspective view of thefirst sub-block 108 a. As shown in FIGS. 6D and 6J, the bore 130 cancomprise an upstream axial flow portion 130A disposed upstream of andterminating in the sub-block 108 a. The upstream axial flow portion 130Acan extend along the longitudinal axis Z of the manifold 100. Althoughthe longitudinal axis Z of the manifold 100 is illustrated as beingdisposed perpendicular to the top surface of the manifold 100, in otherembodiments, the longitudinal axis Z can be disposed obliquely throughthe manifold 100. The upstream axial flow portion 130A of the bore 130can be disposed generally parallel to or along the axis Z. As shown inFIG. 6D, the upstream axial flow portion 130A enters an upper surface181 of the first sub-block 108 a.

In FIGS. 6E and 6J, the upstream axial flow portion 130A can extendaxially (i.e., along the longitudinal axis Z) through a portion of athickness of the sub-block 108 a. FIG. 6F is a top schematic perspectiveview of the second sub-block 108 b. When assembled (see FIG. 6C), thefirst sub-block 108 a and the second sub-block 108 b can connecttogether by way of one or more mechanical fasteners. The first andsecond sub-blocks 108 a, 108 b can cooperate to define the first lateralportion 180 a of the pathway 180 of the bore 130. For example, a lowersurface 182 of the first sub-block 108 a can comprise a first groove 183formed through a portion of the thickness of the first sub-block 108 a.The upper surface 181 of the second sub-block 108 b can comprise asecond groove 184 formed through a portion of the thickness of thesecond sub-block 108 b. As shown in FIGS. 6E-6F, the grooves 183, 184can extend from the axial pathway 130A away from and non-parallel to thelongitudinal axis Z. In the illustrated embodiment, the grooves 183, 184extend perpendicular to the axis Z. As shown in FIGS. 6E-6F, the grooves183, 184 delimit a spiral pattern, beginning at the axial flow portion130A and curving outwardly to an outer portion of the sub-blocks 108a-108 b.

FIG. 6G is a schematic bottom perspective view of the second sub-block108 b. As shown in FIGS. 6C, 6F, 6G, and 6J, the offset axial portion180 b can be disposed offset from the axis Z and can include a componentgenerally parallel to the axis Z. In the illustrated embodiment, theoffset axial portion 180 b is disposed generally parallel to the axis Z.In other embodiments, the offset axial portion 180 b may not be parallelto the axis Z, but rather may include a directional component parallelto the axis Z, such that the offset axial portion 180 b conveys the gasthrough at least some displacement along the axis Z. As shown in FIGS.6F and 6G, the offset axial portion 180 b can be defined along an axialchannel 185 formed through the entire thickness of the sub-block 108 b.

FIG. 6H is a schematic top perspective view of the third sub-block 108c. When assembled, the lower surface 182 of the second sub-block 108 bcan cooperate with the upper surface 181 of the third sub-block 108 c todefine the second lateral portion 180 c of the flow pathway 180, asshown in FIG. 6J. For example, a third groove 186 can be formed in thelower surface 182 of the second sub-block 108 b. A fourth groove 187 canbe formed in the upper surface 181 of the third sub-block 108 c. Asshown in FIGS. 6G, 6H, and 6J, the grooves 186, 187 and the secondlateral portion 180 c can extend non-parallel to and towards thelongitudinal axis Z in a spiral pattern. For example, the second lateralflow portion 180 c can extend laterally (e.g., non-parallel to the axisZ) from the offset axial channel 185 to a central portion of thesub-block 108 c.

FIG. 6I is a schematic bottom perspective view of the third sub-block108 c. As illustrated in FIGS. 6H-6J, the groove 187 of the thirdsub-block 108 c can communicate with the downstream axial flow portion130B of the bore 130. Gases flowing through the second lateral portion180 c can transition from lateral flow through the pathway 180 to axialflow through the axial portion 130B of the bore 130.

In the illustrated embodiments, the extended length flow pathway 180extends laterally away from the longitudinal axis Z, extends parallel tobut offset from the axis Z, and extends laterally towards thelongitudinal axis Z. In the illustrated embodiments, the first andsecond axial portions 130A, 130B of the bore 130 are generally alignedalong the longitudinal axis Z. However, it should be appreciated that inother embodiments, the downstream axial portion 130B may be offset fromthe longitudinal axis Z. For example, in such embodiments, the reactionchamber 810 and the outlet 132 may be disposed offset from the inlet 120and the axis Z. Moreover, in the illustrated embodiments, the pathway180 includes two lateral portions 180 a, 180 c, and one offset axialportion 180 b. In other embodiments, however, additional sub-blocks maybe added to provided additional mixing length. For example, in sucharrangements, the pathway 180 may comprise any suitable number oflateral portions and offset axial portions. The additional lateral andoffset axial portions may further improve the mixing of the suppliedgases.

The positioning of the lateral flow portions 180 a, 180 c, and theoffset axial portion 180 b can beneficially extend the mixing length ofthe bore 130 downstream of the location L at which the supply channelsenter the bore 130. Extending the mixing length of the bore 130 can alsoextend the mixing time of the gases supplied to the bore 130, which canimprove uniformity of deposition and improve device yield. Inparticular, the embodiment of FIGS. 6A-6J can provide a mixingnon-uniformity of less than 2%, e.g., less than 1%. In some embodiments,the extended mixing length provided by FIGS. 6A-6J can provide a mixingnon-uniformity of less than 0.5%, or more particularly less than 0.15%,e.g., about 0.09%.

For example, as shown in FIG. 6C, the manifold 100 can extend along amanifold length l. In some semiconductor devices, such as thoseillustrated in FIGS. 1-4F, the bore can extend generally along the axisZ from the inlet 120 to the outlet 132. In such arrangements, therefore,the length of the bore can extend from a first end portion at the inlet120 to a second end portion at the outlet 132 such that the length ofthe bore is the same as the length l of the manifold 100. However, inthe embodiment shown in FIGS. 6A-6J, the length of the gas pathwaydefined by the bore 130 from the inlet 120, through the upstream axialportion 130A, through the extended length mixing pathway 180, andthrough the downstream axial portion 130B may be greater than the lengthl defined between the inlet 120 and outlet 132 (e.g., between the firstand second end portions of the manifold 100).

FIG. 7A is a flowchart illustrating a method 700 for depositing one ormore layers on a substrate. The method 700 begins in a block 701 toprovide a manifold comprising a bore therein. The bore can define a gaspassageway between a first end portion of the manifold and a second endportion of the manifold. The first end portion can be disposed oppositeto and spaced from the second end portion along a longitudinal axis ofthe manifold by a first distance. In various embodiments, the first endportion of the manifold can comprise the end portion at which an inertgas inlet is disposed. The second end portion can comprise the endportion at which the outlet is disposed.

Turning to a block 702, a reactant gas can be supplied to the bore. Insome embodiments, the reactant gas can be supplied to a distributionchannel from a gas source. The gas can be conveyed to the bore by way ofone or more supply channels extending form the distribution channel tothe bore. In some embodiments, the supply channel can comprise a slitdefining an at least partially annular gap through an inner wall of thebore. In other embodiments, the supply channels can comprise angledpassageways that angle inwardly from the distribution channel to thebore at an acute angle.

In a block 703, the reactant gas can be directed along the gaspassageway from the first end portion to the second end portion for asecond distance. The second distance can be larger than the firstdistance. As explained herein, in some embodiments, the reactant gas canbe directed along a first lateral portion extending non-parallel to andaway from the longitudinal axis of the manifold. An offset axial portionof the pathway can convey the gas along the longitudinal axis. A secondlateral portion can extend non-parallel to and towards the longitudinalaxis of the manifold. In some arrangements, a downstream axial portionof the bore can convey the mixed gases to the reaction chamber.Advantageously, as explained herein, the extended mixing length canimprove mixing and reduce non-uniformities of deposition processes.

FIG. 7B is a flowchart illustrating a method 750 for depositing one ormore layers on a substrate, according to various embodiments. In a block751, a manifold comprising a bore can be provided. The bore can comprisean axial portion that defines a longitudinal axis of the manifold and alateral portion extending non-parallel to the longitudinal axis. In ablock 752, a reactant gas can be supplied to the axial portion of thebore at a first location along the longitudinal axis. For example, asexplained above, the gas can be supplied to the axial portion by way ofa supply channel comprising a slit. In other embodiments, the gas can besupplied to the axial portion by way of one or more angled supplychannels.

In a block 752, the reactant gas can be directed through the axialportion of the bore parallel to the longitudinal axis. In a block 753,downstream of the axial portion, the reactant gas can be directedthrough the lateral portion of the bore in a direction non-parallel tothe longitudinal axis. In some embodiments, the gas can pass from thelateral portion into an offset axial portion of the bore in a directionparallel to (or including a directional component parallel to) thelongitudinal axis. As explained herein, a second lateral portion canextend laterally towards the longitudinal axis to convey the gas fromthe offset axial portion to a downstream axial portion. The gas can beconveyed along the downstream axial portion to the reaction chamber.

IV. Manifolds with Single Gas Supply Tier

Various embodiments disclosed herein relate to manifolds 100 with asingle reactant supply channel for each reactant gas to be supplied tothe bore 100. For example, a semiconductor processing device cancomprise a manifold comprising a bore defining an inner wall and achannel through the manifold. The device can include a source of areactant gas. A supply channel can be configured to deliver the reactantgas to the bore by way of an opening on the inner wall of the bore. Allthe reactant gas can be delivered to the bore by the opening.

FIG. 8A is a schematic perspective view of a manifold 100 that includesa single tier of gas delivery to the bore 130. Unless otherwise noted,reference numerals in FIGS. 8A-8F represent components that are the sameas or similar to like numbered components in FIGS. 1-7B. For example, asshown in FIG. 8A, the manifold 100 can comprise a manifold body 102connected with two blocks 112 a, 112 b. First and second valves 116 a,116 b (e.g., reactant gas valves) may be disposed on the blocks 112 a,112 b. The inert gas inlet 120 can supply inert gas to the bore 130.

FIG. 8B is a schematic side cross-sectional view of a semiconductorprocessing device 10 comprising the manifold 10 of FIG. 8A and thereaction chamber 810. FIG. 8C illustrates the flow pathway of the gasesthrough the manifold 100 of FIG. 8B. As with the embodiment of FIGS.6A-6J, the manifold 100 can comprise an upstream axial flow portion130A, an extended mixing length passageway 180, and a downstream axialflow portion 130B. In addition, the pathway 180 can comprise a firstlateral portion 180 a, an offset axial portion 180 b, and a secondlateral portion 180 c. Beneficially, the pathway 180 can extend themixing length downstream of the location at which the gases enter thebore 130. The extended mixing length can improve the mixing of suppliedgases to improve uniformity and device yield.

The extended mixing length provided by the pathway 180 can alsoadvantageously enable the use of a single gas supply tier 190. Unlikethe embodiments of FIGS. 2-6J, in which the gases are supplied alongmultiple tiers spaced apart along the longitudinal axis Z, in theembodiment of FIGS. 8B-8C, the supply tier 190 can comprise a firstsupply channel 190 a and a second supply channel 190 b that deliversgases to the bore 130 by way of corresponding openings 191 a, 191 b inthe inner wall of the manifold 100. The first and second supply channels190 a, 190 b can be disposed opposite one another at approximately thesame axial location. In other arrangements, disposing the supplychannels in a spaced relationship along the bore 130 can improve mixing.However, in FIGS. 8B-8C, the extended mixing length provided by thepathway 180 can enable use of the first supply channel 190 a to supplyall the reactant gas provided to the manifold 100 by a correspondingfirst gas source. Similarly, the second supply channel 190 b can supplyall the reactant gas provided to the manifold 100 by a second gassource. Thus, all the first gas can pass through the first supplychannel 190 a and first opening 191 a to the bore 130, e.g., to theupstream axial portion 130A. All the second gas can pass through thesecond supply channel 190 b and second opening 191 b to the bore 130,e.g., to the upstream axial portion 130A of the bore 130.

FIGS. 8D-8F are schematic side cross-sectional views of the supply tier190 shown in FIGS. 8B-8C, according to various embodiments. In FIG. 8D,the gas supply tier 190 comprises first and second supply channels 190a, 190 b that extend non-parallel to the longitudinal axis Z, e.g., thesupply channels 190 a, 190 b are disposed perpendicular to the axis Z.Gas flows through the openings 191 a, 191 b to the bore 130, and areconveyed axially along the axis Z to the extended mixing pathway 180 andthe reaction chamber 810. In FIG. 8D, the supply channels 190 a, 190 bextend horizontally such that the channels 190 a, 190 b areperpendicular to the bore 130. Such an arrangement can advantageouslysimplify manufacturing processes as compared with manifolds that utilizeangled channels. The extended mixing length pathway 180 can facilitatedownstream mixing of the supplied gases.

FIG. 8E illustrates first and second supply channels 190 a, 190 b thathave downwardly-angled portions 192 that convey the gases to the bore130. Angling the portions 192 along the axis Z can beneficially enhancemixing in the axial portion 130A of the bore 130. In FIG. 8F, the angledportions 192 enter the bore 130 upstream of an expanded bore portion 193that has a larger diameter than the portion of the bore 130 upstream ofthe expanded portion 193. The expanded portion 193 can comprise a mixingchamber in the bore 130 in which the supplied gases can mix together.

FIG. 9 is a flowchart illustrating a method 900 of depositing one ormore films on a substrate, according to various embodiments. In a block901, a manifold can be provided. The manifold can comprise a bore havingan inner wall and defining a channel through the manifold. In a block902, all of a reactant gas can be supplied through the single opening onthe inner wall of the bore. As explained herein, the use of a single gassupply tier can simplify manufacturing of the manifold. For example, asecond supply channel and a second opening can be disposed at the sameaxial position as the single opening and a first supply channel thatsupplies gas to the single opening.

Although the foregoing has been described in detail by way ofillustrations and examples for purposes of clarity and understanding, itis apparent to those skilled in the art that certain changes andmodifications may be practiced. Therefore, the description and examplesshould not be construed as limiting the scope of the invention to thespecific embodiments and examples described herein, but rather to alsocover all modification and alternatives coming with the true scope andspirit of the invention. Moreover, not all of the features, aspects andadvantages described herein above are necessarily required to practicethe present invention.

1.-50. (canceled)
 51. A semiconductor processing device comprising: Amanifold comprising a bore therein, the bore defining a gas passagewaybetween a first end portion of the manifold and a second end portion ofthe manifold, the first end portion disposed opposite to and spaced fromthe second end portion along a longitudinal axis of the manifold by afirst distance, wherein the gas passageway extends through the manifoldfor a second distance larger than the first distance; and a reactionchamber disposed downstream of and in fluid communication with the bore.52. The device of claim 51, wherein the bore comprises an axial portionthat defines the longitudinal axis of the manifold and a lateral portionextending non-parallel to the longitudinal axis.
 53. The device of claim52, wherein the bore comprises an offset axial portion extendingdownstream from the lateral portion and having a directional componentalong the longitudinal axis, the offset axial portion disposed laterallyoffset from the longitudinal axis.
 54. The device of claim 53, whereinthe bore comprises a second lateral portion extending non-parallel tothe longitudinal axis from the offset axial portion.
 55. The device ofclaim 51, further comprising a substrate support configured to support asubstrate.
 56. The device of claim 55, further comprising a showerheadconfigured to disperse gas to the reaction chamber.
 57. The device ofclaim 51, further comprising a gas distribution channel that conveys gasfrom gas source to bore by way of a supply channel.
 58. The device ofclaim 57, further comprising a reactant gas valve configured toselectively transfer the gas to the gas distribution channel.
 59. Asemiconductor processing device comprising: a manifold comprising a borehaving an axial portion that defines a longitudinal axis of the manifoldand a lateral portion extending non-parallel to the longitudinal axis; asupply channel that supplies gas to the axial portion of the bore at afirst location along the longitudinal axis, the lateral portion disposedat a second location downstream of the first location, the lateralportion extending non-parallel relative to the longitudinal axis; and areaction chamber disposed downstream of and in fluid communication withthe bore.
 60. The device of claim 59, wherein the bore comprises anoffset axial portion extending downstream from the lateral portion andhaving a directional component along the longitudinal axis, the offsetaxial portion disposed laterally offset from the longitudinal axis. 61.The device of claim 60, wherein the bore comprises a second lateralportion extending non-parallel to the longitudinal axis from the offsetaxial portion.
 62. The device of claim 59, further comprising asubstrate support configured to support a substrate.
 63. The device ofclaim 59, further comprising a showerhead configured to disperse gas tothe reaction chamber.
 64. The device of claim 59, further comprising agas distribution channel that conveys gas from a gas source to the boreby way of a supply channel.
 65. The device of claim 64, furthercomprising a reactant gas valve configured to selectively transfer thegas to the gas distribution channel.
 66. The method of claim 69, whereinthe bore defines a gas passageway between a first end portion of themanifold and a second end portion of the manifold, the first end portiondisposed opposite to and spaced from the second end portion along thelongitudinal axis of the manifold by a first distance, the methodfurther comprising: directing the reactant gas along the gas passagewayfrom the first end portion to the second end portion for a seconddistance, the second distance larger than the first distance.
 67. Themethod of claim 66, further comprising, downstream of the lateralportion: directing the reactant gas along an offset axial portiongenerally parallel to the longitudinal axis; directing the reactant gasfrom the offset axial portion along a second lateral portion towards thelongitudinal axis; and directing the reactant gas through a downstreamaxial portion of the bore to a reaction chamber.
 68. The method of claim69, further comprising supplying all of the reactant gas through asingle opening on an inner wall of the bore.
 69. A method of deposition,the method comprising: providing a manifold comprising a bore having anaxial portion that defines a longitudinal axis of the manifold and alateral portion extending non-parallel to the longitudinal axis;supplying a reactant gas to the axial portion of the bore at a firstlocation along the longitudinal axis; directing the reactant gas throughthe axial portion of the bore parallel to the longitudinal axis; anddownstream of the axial portion, directing the reactant gas through thelateral portion of the bore in a direction non-parallel to thelongitudinal axis.
 70. The device of claim 61, further comprising adownstream axial portion having a directional component along thelongitudinal axis, the downstream axial portion providing fluidcommunication between the second lateral portion and the reactionchamber. 71.-82. (canceled)